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AD230-8 AD230-9 AD230-10 AD800 AD1200 AD1500 AD3000um 230um 800nm Avalanche photodiode

AD230-8 AD230-9 AD230-10 AD800 AD1200 AD1500 AD3000um 230um 800nm Avalanche photodiode

China AD230-8 AD230-9 AD230-10 AD800 AD1200 AD1500 AD3000um 230um 800nm Avalanche photodiode supplier
AD230-8 AD230-9 AD230-10 AD800 AD1200 AD1500 AD3000um 230um 800nm Avalanche photodiode supplier AD230-8 AD230-9 AD230-10 AD800 AD1200 AD1500 AD3000um 230um 800nm Avalanche photodiode supplier AD230-8 AD230-9 AD230-10 AD800 AD1200 AD1500 AD3000um 230um 800nm Avalanche photodiode supplier AD230-8 AD230-9 AD230-10 AD800 AD1200 AD1500 AD3000um 230um 800nm Avalanche photodiode supplier AD230-8 AD230-9 AD230-10 AD800 AD1200 AD1500 AD3000um 230um 800nm Avalanche photodiode supplier AD230-8 AD230-9 AD230-10 AD800 AD1200 AD1500 AD3000um 230um 800nm Avalanche photodiode supplier

Large Image :  AD230-8 AD230-9 AD230-10 AD800 AD1200 AD1500 AD3000um 230um 800nm Avalanche photodiode

Product Details:

Place of Origin: South Korea
Brand Name: hasunopto
Certification: Rohs SGS
Model Number: AD800-8-TO52S1F2

Payment & Shipping Terms:

Minimum Order Quantity: 10pcs
Price: USD 1.00
Packaging Details: 1000pcs
Delivery Time: 1-2 weeks
Payment Terms: In aliexpress payment
Supply Ability: 1000Kpcs
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Detailed Product Description
Photosensitive Surface: 230um 500um 800um 1000um 1500um 3000um Wavelength: 800nm 905nm 635nm 650nm 1064nm
Package: TO CAN Or Ceramics Filter: Yes Or No

Hasunopto Electric Co., ltd is a state-level high and new technology company and world-leading semiconductor company. Hasunopto specializes in the R&D, production and application of cutting-edge GaN-MOCVD equipment as well as DUV LED products with wavelength ranging from 260nm to 320nm.   
 
 
 
As the world’s largest solar blind DUV LED supplier, Hasunopto is the only company in China which can build their own epitaxy tools, grow world-class materials and make DUV LED devices. With a high-caliber international R&D team made up of researchers, Doctors, Masters as well as proprietary and patented technology, the company now maintains a dominant position in the LED industrial chain.
 
 
 
Using our independently-developed GaN-MOCVD equipment, we manufacture DUV LED products on sapphire substrates. Hasunopto boasts a world-class UV LED production line which covers the whole process from equipment manufacturing to epitaxial growth, wafer preparation and packaging. The company also boasts a world-class R&D team made up of returned Doctors who have rich experience in designing and manufacturing GaN-MOCVD equipment and are experts on UV LED technology (including the complete set of technology from epitaxial growth to wafer preparation, packaging and so on).  
 
1622377954@qq.com       +86-15338809160    AD230-8 AD230-9 AD230-10 AD800 AD1200 AD1500 AD3000um 230um 800nm Avalanche photodiodeAD230-8 AD230-9 AD230-10 AD800 AD1200 AD1500 AD3000um 230um 800nm Avalanche photodiodeAD230-8 AD230-9 AD230-10 AD800 AD1200 AD1500 AD3000um 230um 800nm Avalanche photodiode
11 series: blue sensitive enhancement type
Order # Chip Package Active Area Dark current Breakdown Rise time (ns)
Size (mm) / (nA) 3.5 V voltage M = 100, 410 nm, 50 Ω
Area (mm²)      
500970 AD800-11 TO52S1 Ø 0,8 / 0.5 1 90 - 240* 1
500967 AD1900-11 TO5i Ø 1,95 / 3 5 90 - 240* 2
* Binning available            
             
12 series: red sensitive enhanced type
Order # Chip Package Active Area Spectral Capa- Cut-off
Size (mm) / Responsivity (A/W) citance (pF); frequency (GHz)
Area (mm²) 660 nm; M = 100 M = 100 660 nm, 50 Ω
501828 AD100-12 LCC6.1 Ø 0.1 / 0.008 50 typ. 0.5 typ. 3, min. 2
501831 AD100-12 TO52S1 Ø 0.1 / 0.008 50 typ. 0.5 typ. 3, min. 2
501157 AD230-12 LCC6.1 Ø 0.23 / 0.042 50 typ. 1.5 typ. 3, min. 2
501162 AD230-12 TO52S1 Ø 0.23 / 0.042 50 typ. 1.5 typ. 3, min. 2
501155 AD500-12 LCC6.1 Ø 0.5 / 0.196 50 typ. 4.5 typ. 3, min. 2
501163 AD500-12 TO52S1 Ø 0.5 / 0.196 50 typ. 4.5 typ. 3, min. 2
             
Another chip with built-in band pass (BP) filter is optional
Technical specifications and PDF data sheets
Order # Chip Package Active Area BP center BP trans- BP FWHM
(mm) (nm) mission (%) (nm)
501829 AD100-12 LCC6.1f 0.1 635 >90 55
501830 AD100-12 LCC6.1f 0.1 655 >85 65
501156 AD230-12 LCC6.1f 0.23 635 >90 55
501820 AD230-12 LCC6.1f 0.23 655 >85 65
501154 AD500-12 LCC6.1f 0.5 635 >90 55
501819 AD500-12 LCC6.1f 0.5 655 >85 65
             
             
8 series: optimized design for high cutoff frequencies (650nm to 850nm band)
Order # Chip Package Active Area Dark current Breakdown Rise time (ns)
Size (mm) / (nA); M = 100 voltage (V) M = 100,
Area (mm²)     905 nm, 50 Ω
       
501810 AD100-8 LCC6.1 Ø 0.1 / 0.008 0.05 80–160* <0.180
500011 AD100-8 TO52S1 Ø 0.1 / 0.008 0.05 80–160* <0.180
501171 AD100-8 TO52S3 Ø 0.1 / 0.008 0.05 80–160* <0.180
501078 AD230-8 LCC6.1 Ø 0.23 / 0.04 0.3 80–160* 0.18
500019 AD230-8 TO52S1 Ø 0.23 / 0.04 0.3 80–160* 0.18
500022 AD230-8 TO52S3 Ø 0.23 / 0.04 0.3 80–160* 0.18
501496 AD230-8 ODFN2x2 Ø 0.23 / 0.04 0.3 80–160* 0.18
501077 AD500-8 LCC6.1 Ø 0.5 / 0.2 0.5 80–160* 0.35
500030 AD500-8 TO52S1 Ø 0.5 / 0.2 0.5 80–160* 0.35
500305 AD500-8 TO52S2 (lens) Ø 0.5 / 0.2 0.5 80–160* 0.35
500155 AD500-8 TO52S3 Ø 0.5 / 0.2 0.5 80–160* 0.35
500947 AD800-8 TO52S1 Ø 0.8 / 0.5 2 80–240* 0.7
501117 AD1100-8 TO52S1 Ø 1.13 / 1 4–6 80–240* 1
500015 AD1900-8 TO5i Ø 1.95 / 3 15 80–200* 1.4
501194 AD3000-8 TO5i Ø 3 / 7.07 30 80–200* 2
500160 AD5000-8 TO8i Ø 5 / 19.63 60 80–200* 3
* Binning available
Another chip with built-in band pass (BP) filter is optional
Order # Chip Package Active Area BP center BP trans- BP FWHM
(mm) (nm) mission (%) (nm)
501811 AD100-8 LCC6.1f 0.1 635 >90 55
501812 AD100-8 LCC6.1f 0.1 655 >85 65
501079 AD230-8 LCC6.1f 0.23 635 >90 55
501805 AD230-8 LCC6.1f 0.23 655 >85 65
501076 AD500-8 LCC6.1f 0.5 635 >90 55
501809 AD500-8 LCC6.1f 0.5 655 >85 65
             
Hybrid module
Technical specifications and PDF data sheets
Order # Chip Package Transimpedance [Ohm] Bandwidth [MHz]    
500002 AD230-8 TO5 2750 2000    
501535 AD230-8 TO52 2750 2000    
500003 AD500-8 TO5 2750 1000    
501536 AD500-8 TO52 2750 1300    
             
9 series: near infrared sensitive enhancement type (900nm band)
Order # Chip Package Active Area Dark current Breakdownvoltage (V) Rise time (ns);
Size (mm) / (nA); M = 100 M = 100,
Area (mm²)   905 nm, 50 Ω
     
500020 AD230-9 TO52S1 Ø 0.23 / 0.04 0.5 160–240* 0.5
500023 AD230-9 TO52S3 Ø 0.23 / 0.04 0.5 160–240* 0.5
501123 AD230-9 LCC6.1 Ø 0.23 / 0.04 0.5 160–240* 0.5
501557 AD230-9 ODFN2x2 Ø 0.23 / 0.04 0.5 160–200* 0.5
500031 AD500-9 TO52S1 Ø 0.5 / 0.2 0.8 160–240* 0.55
500306 AD500-9 TO52S2 Ø 0.5 / 0.2 0.8 160–240* 0.55
500156 AD500-9 TO52S3 Ø 0.5 / 0.2 0.8 160–240* 0.55
501122 AD500-9 LCC6.1 Ø 0.5 / 0.2 0.8 160–240* 0.55
501196 AD800-9 TO52S1 Ø 0.8 / 0.5 2 160–240* 0.9
501197 AD1100-9 TO52S1 Ø 1.13 / 1 4 160–240* 1.3
501208 AD1500-9 TO5i Ø 1.5 / 1.77 2 160–240* 2
501198 AD3000-9 TO5i Ø 3 / 7.07 30 160–240* 2
50016101 AD5000-9 TO8i Ø 5 / 19.63 60 160–240* 3
* Binning available
Another chip with built-in band pass (BP) filter is optional
Technical specifications and PDF data sheets
Order # Chip Package Active Area BP center BP trans- BP FWHM
(mm²) (nm) mission (%) (nm)
501265 AD230-9 TO52S1F2 0.23 905 >90 45
501817 AD230-9 LCC6.1f 0.23 905 >90 45
500590 AD500-9 TO52S1F2 0.5 905 >90 45
501818 AD500-9 LCC6.1f 0.5 905 >90 45
             
Multi-element array
Technical specifications and PDF data sheets
Order # Chip Package        
501099 8AA0.4-9 SOJ22GL APD Array 8 elements, QE > 80 % @ 760-910 nm with NTC      
501098 16AA0.13-9 SOJ22GL APD Array 16 elements, QE > 80% @ 760-910 nm with NTC      
500038 16AA0.13-9 DIL18 APD Array 16 elements, QE > 80 % @ 760-910 nm      
501097 16AA0.4-9 SOJ22GL APD Array 16 elements, QE > 80 % @ 760-910 nm      
50130802 25AA0.04-9 BGA APD Array 25 (5x5) elements, QE >80 % @ 760-910nm with PTC      
50130702 64AA0.04-9 BGA APD Array 64 (8x8) elements, QE > 80 % @ 760-910 nm with PTC      
501207 QA4000-9 TO8Si Quadrant Avalanche Photodiode, QE > 80 % @ 760-910 nm      
             
Hybrid module            
Technical specifications and PDF data sheets            
Order # Chip Package Transimpedance [Ohm] Bandwidth [MHz]    
501403 AD500-9-8015 TO52 2750 500    
500756 AD230-9 TO5 2750 600    
500490 AD500-9 TO5 2750 500    
             
             
             
9.5 series: near infrared sensitive enhancement type (950nm band)
The series of avalanche photodiodes are developed for laser ranging and laser scanning, and can be used in security scanning, 3D- measurements, environmental monitoring, and high resolution lidar (LIDAR) systems. Based on the 9.5 series technology, we can provide customized products with different shapes, packages and sensor arrays according to customer's requirements.
Characteristic
Fast rise time and excellent response in 950nm band
A low gain slope can be achieved when the operating voltage is greater than the bias voltage
Very low dark current
Technical specifications and PDF data sheets
Order # Chip Package Active Area Dark current Breakdownvoltage (V) Rise time (ns)
Size (mm) / (nA); M = 100 M = 100,
Area (mm²)   905 nm, 50 Ω
     
501325 AD500-9.5 LCC6.1 Ø 0.5 / 0.2 0.5 260–340* 1.6
* Binning available
             
10 series: near infrared sensitive enhancement type (1064nm band)
This series of avalanche photodiodes is suitable for any range of applications such as laser range finders and YAG lasers or similar near infrared radiation sources.
Characteristic
The quantum yield is high in 1064nm band
high sensitivity
Low-noise
high speed
Optimized for longer wavelengths
Technical specifications and PDF data sheets
Order # Chip Package Active Area Dark current Breakdown  
Size (mm) / (nA); M = Vop voltage (V)  
Area (mm²)      
500953 AD500-10 TO5i Ø 0.5 / 0.2 1.5 220-600*  
501233 AD800-10 TO5i Ø 0.8 / 0.5 3 220-600*  
500883 AD1500-10 TO5i Ø 1.5 / 1.77 7 220-600*  
50123401 AD4000-10 TO8Si Ø 4 / 12.56 50 220-600*  
* Binning available
Multi-element array
             
Order # Chip Package        
501174 QA4000-10 TO8Si Quadranten Avalanche Photodiode, High QE at 850-1070 nm      
             
Hybrid module
             
Order # Chip Package Transimpedance [Ohm] Bandwidth [MHz]    
501387 AD800-10 TO8S 10 k 65    
 

Contact Details
hasun optoelectronics HK co., LTD

Contact Person: Miss. Lee

Tel: 86-153-38809160

Fax: 86-189-26040321

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